Title: Influence of deposition temperature on the structure of Si3N4 thin film prepared by MWECR-PECVD
Author(s): Xiao H, Chen JF, Zhang ZX
Source: PLASMA SCIENCE & TECHNOLOGY 6 (5): 2485-2488 OCT 2004
Document Type: Article
Language: English
Cited References: 12 Times Cited: 0
Abstract: The Si3N4 thin film is prepared by MWECR-PECVD at different deposition temperature and the structure of the Si3N4 thin film is investigated. The results indicate that the structure of the Si3N4 thin film prepared at low deposition temperature is in the amorphous phase. However, when the deposition temperature increases to 280degreesC, the Si3N4 thin film changes to crystalline alpha-Si3N4. With a further increase of the deposition temperature, the grain of the Si3N4 thin film becomes more fine, uniform and flat. XRD analysis shows that the structure of the Si3N4 thin film prepared at 280degreesC is of a crystalline structure.
Author Keywords: MWECR-PECVD; Si3N4 thin film; crystalline structure
KeyWords Plus: PLASMA CHAMBER; GROWTH
Addresses: Xiao H (reprint author), Xian Jiaotong Univ, Sch Life Sci & Technol, Xian, 710049 Peoples R China
Xian Jiaotong Univ, Sch Life Sci & Technol, Xian, 710049 Peoples R China
S China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou, 510631 Peoples R China
E-mail Addresses: xiaohua@scnu.edu.cn
Publisher: SCIENCE CHINA PRESS, 16 DONGHUANGCHENGGEN NORTH ST, BEIJING 100717, PEOPLES R CHINA
IDS Number: 866FM
ISSN: 1009-0630